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November 2013
FQPF13N50CF
N-Channel QFET ? FRFET ? MOSFET
500 V, 13 A, 540 m Ω
Features
? 13 A, 500 V, R DS(on) = 540 m ? (Max.) @ V GS = 10 V,
I D = 6.5 A
? Low Gate Charge (Typ. 43 nC)
? Low Crss (Typ. 20 pF)
? 100% Avalanche Tested
? Fast Recovery Body Diode (Typ. 100 ns)
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor ’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
D
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
Parameter
FQPF13N50CF
Unit
- Continuous (T C = 100 C)
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
o
500
10.5 *
6.6 *
V
A
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
42 *
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
860
13
19.5
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate Above 25
o C
44
0.35
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
°C
°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FQPF13N50CF
2.58
62.5
Unit
°C / W
?2006 Fairchild Semiconductor Corporation
FQPF13N50CF Rev. C1
1
www.fairchildsemi.com
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